VS-GB400TH120N Datasheet, PDF (4/7 Pages) Vishay Siliconix – High short circuit capability, self limiting 6 x IC

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20
16
V_CC = 600 V
12
8
4
0
-4
I_C = 150 A
T_J = 25 °C
-8
0
1
2
3
4
5
Q_g - (μC)
Fig. 5 - Gate Charge Characteristics
10²
C_ies
10¹
C_oes
C_res
10⁰
VS-GB400TH120N
Vishay Semiconductors
10³
t_d(off)
t_d(on)
10²
t_r
t_f
10¹
0
V_CC = 600 V
R_g = 2.5 Ω
V_GE = ± 15 V
T_J = 125 °C
200
400
600
800 1000
I_C (A)
Fig. 7 - Typical Switching Time vs.I_C
10⁴
V_CC = 600 V
I_C = 400 A
V_GE = ± 15 V
T_J = 125 °C
10³
10²
t_d(off)
t_d(on)
t_r
t_f
10^-1
0
1
2
3
4
V_CE (V)
Fig. 6 - Typical Capacitance vs. Collector-to-Emitter Voltage
800
10¹
0
5
10
15
20
R_g (Ω)
Fig. 8 - Typical Switching Time vs. Gate Resistance R_g
600
125 °C
25 °C
400
200
0
0
1
2
3
V_F (V)
Fig. 9 - Typical Forward Characteristics Diode
Revision: 12-Jun-15
4
Document Number: 94788
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