English
Language : 

VS-GB400TH120N Datasheet, PDF (3/7 Pages) Vishay Siliconix – High short circuit capability, self limiting 6 x IC
www.vishay.com
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Operating junction temperature range
TJ
Storage temperature range
TSTG
Junction to case, 
per 1/2 module
IGBT
Diode
RthJC
Case to sink
RthCS
Conductive grease applied
Mounting torque
Power terminal screw: M6
Mounting screw: M6
Weight
VS-GB400TH120N
Vishay Semiconductors
MIN. TYP. MAX. UNITS
-40
-
150
°C
-40
-
125
-
- 0.048
-
- 0.085 K/W
- 0.032 -
2.5 to 5.0
Nm
3.0 to 6.0
340
g
800
700
600
25 °C
500
125 °C
400
300
200
100
VGE = 15 V
0
0
1
2
3
4
VCE (V)
Fig. 1 - Typical Output Characteristics
800
VCE = 20 V
700
600
500
125 °C
400
300
25 °C
200
100
0
6
7
8
9
10
11
VGE (V)
Fig. 2 - Typical Transfer Characteristics
180
VCC = 600 V
160 Rg = 2.5 Ω
140 VGE = ± 15 V
Eon
TJ = 125 °C
120
100
80
60
Eoff
40
20
0
0
200
400
600
800
IC (A)
Fig. 3 - Switching Loss vs. IC
1000
180
160
VCC = 600 V
IC = 400 A
140
VGE = ± 15 V
Eon
120
TJ = 125 °C
100
80
60
Eoff
40
20
0
0
5
10
15
20
Rg (Ω)
Fig. 4 - Switching Loss vs. Rg
Revision: 12-Jun-15
3
Document Number: 94788
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000