VS-GB200LH120N Datasheet, PDF (4/7 Pages) Vishay Siliconix – Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A

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VS-GB200LH120N
Vishay Semiconductors
20
V_CC = 600 V
10
0
I_C = 200 A
T_J = 25 °C
- 10
0
1
2
3
Q_g (μC)
Fig. 5 - Gate Charge Characteristics
10²
C_ies
10¹
C_oes
10⁰
C_res
10^-1
0
10
20
30
40
V_CE (V)
Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage
400
10³
t_d(off)
10²
t_d(on)
t_r
t_f
V_CC = 600 V
R_g = 5 Ω
V_GE = ± 15 V
10¹
T_J = 125 °C
0
100
200
300
400
I_C (A)
Fig. 7 - Typical Switching Time vs. I_C
10⁴
V_CC = 600 V
I_C = 200 A
V_GE = ± 15 V
T_J = 125 °C
10³
10²
t_d(off)
t_d(on)
t_r
t_f
10¹
0
10
20
30
40
R_g (Ω)
Fig. 8 - Typical Switching Time vs. Gate Resistance R_g
300
25 °C
200
125 °C
100
0
0
1
2
3
4
V_F (V)
Fig. 9 - Diode Forward Characteristics
Revision: 10-Jun-15
4
Document Number: 94761
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