VS-GB200LH120N Datasheet, PDF (3/7 Pages) Vishay Siliconix – Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A

www.vishay.com
VS-GB200LH120N
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Operating junction temperature range
T_J
Storage temperature range
T_STG
IGBT (per 1/2 module)
Junction to case
Diode (per 1/2 module)
R_thJC
Case to sink
R_thCS
Conductive grease applied
Mounting torque
Power terminal screw: M6
Mounting screw: M6
Weight
MIN. TYP. MAX. UNITS
-40
-
150
°C
-40
-
125
-
-
0.08
-
-
0.17 K/W
- 0.035 -
2.5 to 5.0
Nm
3.0 to 6.0
300
g
400
V_CE = 20 V
300
200
25 °C
125 °C
100
0
0
5
10
15
V_GE (V)
Fig. 1 - Typical Output Characteristics
400
V_GE = 15 V
350
300
25 °C
250
200
125 °C
150
100
50
0
0
1
2
3
V_CE (V)
Fig. 2 - Typical Transfer Characteristics
35
V_CC = 600 V
30
R_g = 5 Ω
25
V_GE = ± 15 V
T_J = 125 °C
E_on
20
E_off
15
10
5
0
0
100
200
300
400
I_C (A)
Fig. 3 - Switching Loss vs. Collector Current
80
V_CC = 600 V
I_C = 200 A
60
V_GE = ± 15 V
T_J = 125 °C
40
20
E_on
E_off
0
0
10
20
30
40
R_g (Ω)
Fig. 4 - Switching Loss vs. Gate Resistor
Revision: 10-Jun-15
3
Document Number: 94761
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000