VS-GB150TH120N Datasheet, PDF (4/7 Pages) Vishay Siliconix – Molding Type Module IGBT, 2-in-1 Package, 1200 V and 150 A

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VS-GB150TH120N
Vishay Semiconductors
350
300
250
I_C, Module
200
150
100
R_g = 4.7 Ω
50 ^VGE ^{= ± 15 V}
T_J = 125 °C
0
0
300
600
900
V_CE (V)
Fig. 5 - RBSOA
1200
1500
10⁰
10^-1
IGBT
10^-2
10^-3
10^-3
10^-2
10^-1
10⁰
10¹
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
300
250
200
T_J = 25 °C
150
T_J =125 °C
100
50
0
0 0.5 1 1.5 2 2.5 3 3.5
V_F (V)
Fig. 7 - Diode Typical Forward Characteristics
30
V_CC = 600 V
25
R_g = 4.7 Ω
V_GE = - 15 V
T_J = 125 °C
20
15
10
5
0
0
50 100 150 200 250 300
I_F (A)
Fig. 8 - Diode Switching Loss vs. I_F
Revision: 10-Jun-15
4
Document Number: 94760
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