VS-GB150TH120N Datasheet, PDF (3/7 Pages) Vishay Siliconix – Molding Type Module IGBT, 2-in-1 Package, 1200 V and 150 A

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VS-GB150TH120N
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Operating junction temperature range
T_J
Storage temperature range
T_STG
Junction to case
IGBT
Diode
R_thJC
Case to sink
R_thCS
Conductive grease applied
Mounting torque
Power terminal screw: M6
Mounting screw: M6
Weight
MIN. TYP. MAX. UNITS
-
-
150
°C
-40
-
125
-
- 0.124
-
- 0.174 K/W
- 0.035 -
2.5 to 5.0
Nm
3.0 to 5.0
300
g
300
V_GE = 15 V
250
200
T_J = 25 °C
150
T_J =125 °C
100
50
0
0 0.5 1 1.5 2 2.5 3 3.5
V_CE (V)
Fig. 1 - IGBT Typical Output Characteristics
300
V_CE = 20 V
250
200
T_J =125 °C
150
T_J = 25 °C
100
50
0
5 6 7 8 9 10 11 12 13
V_GE (V)
Fig. 2 - IGBT Typical Transfer Characteristics
40
V_CC = 600 V
35 R_g = 4.7 Ω
V_GE = ± 15 V
30 _{TJ = 125 °C}
25
20
15
10
5
0
0
50 100 150 200 250 300
I_C (A)
Fig. 3 - IGBT Switching Loss vs. I_C
80
V_CC = 600 V
70 I_C = 150 A
V_GE = ± 15 V
60 _{TJ = 125 °C}
50
E_on
40
30
20
E_off
10
0
0 5 10 15 20 25 30 35 40 45
R_g (Ω)
Fig. 4 - IGBT Switching Loss vs. R_g
Revision: 10-Jun-15
3
Document Number: 94760
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