VS-GB150LH120N Datasheet, PDF (4/6 Pages) Vishay Siliconix – Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 150 A

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VS-GB150LH120N
Vishay Semiconductors
20
V_CC = 600 V
15
10
5
I_C = 150 A
T_J = 25 °C
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Q_G (μC)
Fig. 5 - Gate Charge Characteristics
10³
t_d(off)
t_d(on)
10²
10¹
0
t_r
t_f
V_CC = 600 V
R_g = 6.8 Ω
V_GE = ± 15 V
T_J = 125 °C
100
200
300
I_C (A)
Fig. 7 - Typical Switching Times vs. I_C
10²
C_ies
10¹
C_oes
10⁰
C_res
10⁴
V_CC = 600 V
I_C = 150 A
V_GE = ± 15 V
T_J = 125 °C
10³
10²
t_d(off)
t_d(on)
t_r
t_f
10^-1
0
5 10 15 20 25 30 35
V_CE (V)
Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage
10¹
0
20
40
60
R_g (Ω)
Fig. 8 - Typical Switching Times vs. Gate Resistance R_g
300
250
200
25 °C
150
125 °C
100
50
0
0
1
2
3
4
V_F (V)
Fig. 9 - Typical Forward Characteristics, Diode
Revision: 10-Jun-15
4
Document Number: 94757
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