VS-GB150LH120N Datasheet, PDF (3/6 Pages) Vishay Siliconix – Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 150 A

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VS-GB150LH120N
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Operating junction temperature range
T_J
Storage temperature range
T_STG
IGBT (per 1/2 module)
Junction to case
Diode (per 1/2 module)
R_thJC
Case to sink
R_thCS
Conductive grease applied
Mounting torque
Power terminal screw: M6
Mounting screw: M6
Weight
MIN. TYP. MAX. UNITS
-40
-
150
°C
-40
-
125
-
-
0.09
-
-
0.24 K/W
- 0.035 -
2.5 to 5.0
Nm
3.0 to 6.0
300
g
300
V_GE = 15 V
250
200
25 °C
150
125 °C
100
50
0
0
1
2
3
4
V_CE (V)
Fig. 1 - Typical Output Characteristics
400
V_GE = 15 V
300
200
125 °C
25 °C
100
0
02
4
6
8 10 12 14
V_GE (V)
Fig. 2 - Typical Transfer Characteristics
60
V_CC = 600 V
50
R_g = 6.8 Ω
V_GE = ± 15 V
T_J = 125 °C
40
E_on
30
20
E_off
10
0
0
100
200
300
I_C (A)
Fig. 3 - Switching Loss vs. Collector Current
60
V_CC = 600 V
50
I_C = 150 A
V_GE = ± 15 V
E_on
T_J = 125 °C
40
30
E_off
20
10
0
0
10
20
30
40
50
R_g (Ω)
Fig. 4 - Switching Loss vs. gate Resistor
Revision: 10-Jun-15
3
Document Number: 94757
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