VS-EBU15006HF4 Datasheet, PDF (4/7 Pages) Vishay Siliconix – Screw mounting only

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VS-EBU15006HF4
Vishay Semiconductors
180
160
140
120
DC
100
80
60
40
0
50
100
150
200 250
I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
350
300
RMS Limit
250
200
D = 0.01
150
D = 0.02
D = 0.05
D = 0.1
100
D = 0.2
D = 0.5
50
DC
0
0
50
100
150
200 250
I_F(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
250
200
I_F = 50 A, 125 °C
150
I_F = 50 A, 25 °C
100
typical value
50
100
1000
dI_F/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI_F/dt
3500
3000
2500
I_F = 50 A, 125 °C
2000
1500
1000
I_F = 50 A, 25 °C
500
0
100
typical value
1000
dI_F/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI_F/dt
I_F
0
(3)
t_rr
t_a
t_b
(2) _IRRM
(4)
Q_rr
0.5 I_RRM
dI_(rec)M/dt ⁽⁵⁾
0.75 I_RRM
(1) ^dIF^/dt
(1) dI_F/dt - rate of change of current
through zero crossing
(2) I_RRM - peak reverse recovery current
(3) t_rr - reverse recovery time measured
from zero crossing point of negative
going I_F to point where a line passing
through 0.75 I_RRM and 0.50 I_RRM
extrapolated to zero current.
(4) Q_rr - area under curve defined by t_rr
and I_RRM
Q_rr =
t_rr x I_RRM
2
(5) dI_(rec)M/dt - peak rate of change of
current during t_b portion of t_rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 16-Jun-15
4
Document Number: 94806
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