VS-EBU15006HF4 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Screw mounting only

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VS-EBU15006HF4
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
t_rr
I_RRM
Q_rr
I_F = 1.0 A, dI_F/dt = 100 A/μs, V_R = 30 V
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
I_F = 50 A
V_R = 200 V
dI_F/dt = 200 A/μs
T_J = 125 °C
-
50
-
40
-
100
-
210
-
10.5
-
22
-
550
-
2350
MAX.
-
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
R_thJC
R_thCS
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style PowerTab^®
MIN.
-
-
-
-
1.2
(10)
TYP.
-
MAX.
0.35
0.2
-
-
5.02
0.18
-
2.4
-
(20)
EBU15006H
UNITS
K/W
g
oz.
kgf · cm
(lbf · in)
Revision: 16-Jun-15
2
Document Number: 94806
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000