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VS-APU3006HN3 Datasheet, PDF (4/8 Pages) Vishay Siliconix – Ultrafast recovery time
www.vishay.com
130
120
110
100
90
80
70
60
50
40
30
20
10
100
IF = 30 A, 125 °C
IF = 30 A, 25 °C
typical value
1000
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
VS-APU3006HN3, VS-EPU3006HN3
Vishay Semiconductors
1800
1600
1400
1200
1000
800 IF = 30 A, 125 °C
600
400
200 IF = 30 A, 25 °C
0
100
typical value
1000
dIF/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
0.75 IRRM
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 10-Jul-15
4
Document Number: 94818
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