VS-APU3006HN3 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Ultrafast recovery time

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VS-APU3006HN3, VS-EPU3006HN3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1 A, dI_F/dt = 50 A/μs, V_R = 30 V
-
30
t_rr
T_J = 25 °C
-
45
T_J = 125 °C
-
100
T_J = 25 °C
I_F = 30 A
-
5.6
I_RRM
dI_F/dt = 200 A/μs
T_J = 125 °C
V_R = 200 V
-
10
T_J = 25 °C
Q_rr
T_J = 125 °C
-
127
-
580
MAX.
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
T_J, T_Stg
R_thJC
R_thJA
R_thCS
Typical socket mount
Mounting surface, flat, smooth and
greased
Weight
Mounting torque
Marking device
Case style TO-247AC
Case style TO-247AC modified
MIN.
-65
-
-
-
-
-
1.2
(10)
TYP.
-
MAX.
175
UNITS
°C
0.7
1.1
°C/W
-
70
0.5
-
2.0
-
0.07
-
-
2.4
(20)
APU3006H
EPU3006H
g
oz.
kgf · cm
(lbf · in)
1000
100
T_J = 175 °C
10
T_J = 150 °C
T_J = 25 °C
1
0.0
0.5
1.0
1.5
2.0
2.5
V_FM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
1000
100
10
1
0.1
0.01
175 °C
150 °C
125 °C
100 °C
75 °C
50 °C
25 °C
0.001
0
100 200 300 400 500 600
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 10-Jul-15
2
Document Number: 94818
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