VS-8EWH06FNHM3 Datasheet, PDF (4/7 Pages) Vishay Siliconix – Hyperfast Rectifier, 8 A FRED Pt

www.vishay.com
180
170
160
150
DC
140 _{Square wave (D = 0.50)}
130 ^{rated VR applied}
120
see note (1)
110
0
2
4
6
8 10 12 14
I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
20
18
RMS Limit
16
14
12
10
8
6
4
2
0
0
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
2
4
6
8
10 12
I_F(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;ï€} 
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 6);
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = Rated V_R
VS-8EWH06FNHM3
Vishay Semiconductors
50
45
40
8 A, T_J = 125 °C
35
30
25
8 A, T_J = 25 °C
20
15
10
100
1000
dI_Fdt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI_F/dt
350
300
250
200
8 A, T_J = 125 °C
150
100
8 A, T_J = 25 °C
50
0
100
1000
dI_Fdt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI_F/dt
Revision: 10-Jul-15
4
Document Number: 94739
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000