VS-8EWH06FNHM3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Hyperfast Rectifier, 8 A FRED Pt

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VS-8EWH06FNHM3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1 A, dI_F/dt = 50 A/μs, V_R = 30 V
21
I_F = 1 A, dI_F/dt = 100 A/μs, V_R = 30 V
-
18
t_rr
T_J = 25 °C
-
25
T_J = 125 °C
-
34
I_RRM
T_J = 25 °C
I_F = 8 A
-
dI_F/dt = 200 A/μs
3.3
T_J = 125 °C
V_R = 390 V
-
4.8
T_J = 25 °C
Q_rr
T_J = 125 °C
-
39
-
90
MAX.
UNITS
22
ns
-
-
-
A
-
-
nC
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
T_J, T_Stg
R_thJC
Approximate weight
Marking device
Case style TO-252AA (D-PAK)
MIN.
-65
-
TYP.
-
MAX.
175
1.8
2.2
0.3
0.01
8EWH06FNH
UNITS
°C
°C/W
g
oz.
Revision: 10-Jul-15
2
Document Number: 94739
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