VS-8ETU04PBF Datasheet, PDF (4/8 Pages) Vishay Siliconix – Ultrafast Rectifier, 8 A FRED Pt

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180
170
DC
160
Square wave (D = 0.50)
Rated V_R applied
150
140
See note (1)
130
0
2
4
6
8
10
12
I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
14
12
10
8
6
4
2
DC
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
0
0
2
4
6
8
10
12
I_F(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
VS-8ETU04PbF, VS-8ETU04-N3
Vishay Semiconductors
90
V_R = 200 V
80
T_J = 125 °C
T_J = 25 °C
70
60
50
40
I_F = 16 A
30 I_F = 8 A
20
100
1000
dI_F/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI_F/dt
500
450
V_R = 200 V
T_J = 125 °C
400 ^TJ ^{= 25 °C}
350 I_F = 16 A
300
I_F = 8 A
250
200
150
100
50
0
100
1000
dI_F/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI_F/dt
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;}
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 6);
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = Rated V_R
Revision: 26-Jun-12
4
Document Number: 94030
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