VS-8ETU04PBF Datasheet, PDF (2/8 Pages) Vishay Siliconix – Ultrafast Rectifier, 8 A FRED Pt

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VS-8ETU04PbF, VS-8ETU04-N3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
I_F = 1.0 A, dI_F/dt = 50 A/μA, V_R = 30 V
-
35
Reverse recovery time
t_rr
T_J = 25 °C
-
43
T_J = 125 °C
-
67
Peak recovery current
T_J = 25 °C
I_F = 8 A
-
2.8
I_RRM
dI_F/dt = 200 A/μs
T_J = 125 °C
V_R = 200 V
-
6.3
Reverse recovery charge
T_J = 25 °C
Q_rr
T_J = 125 °C
-
60
-
210
MAX.
60
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance,
junction to case
R_thJC
Thermal resistance,
junction to ambient
R_thJA
Typical socket mount
Thermal resistance,
case to heatsink
R_thCS
Mounting surface, flat, smooth
and greased
Weight
Mounting torque
Marking device
Case style TO-220AC
MIN.
-
-
-
-
-
6.0
(5.0)
TYP.
1.8
MAX.
2
-
50
0.5
-
2.0
-
0.07
-
-
12
(10)
8ETU04
UNITS
°C/W
g
oz.
kgf · cm
(lbf · in)
Revision: 26-Jun-12
2
Document Number: 94030
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