VS-8ETL06PBF Datasheet, PDF (4/9 Pages) Vishay Siliconix – Ultralow VF Hyperfast Rectifier for Discontinuous Mode PFC, 8 A FRED Pt

VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3
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Vishay Semiconductors
180
12
RMS limit
175
10
170
165
DC
160 _{Square wave (D = 0.50)}
Rated V_R applied
155
See note (1)
150
0
2
4
6
8 10 12 14
I_F(AV) - Average Forward Current (A)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
8
6
4
2
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
0
0
2
4
6
8
10
12
I_F(AV) - Average Forward Current (A)
Fig. 8 - Forward Power Loss Characteristics
180
160
DC
140 _{Square wave (D = 0.50)}
Rated V_R applied
120
100
See note (1)
80
0
2
4
6
8 10 12 14
I_F(AV) - Average Forward Current (A)
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
450
400
V_R = 390 V
T_J = 125 °C
350
T_J = 25 °C
300
250
200
150
100
50 ^IF ^{= 16 A}
I_F = 8 A
0
100
1000
dI_F/dt (A/µs)
Fig. 9 - Typical Reverse Recovery Time vs. dI_F/dt
5000
4500
4000
I_F = 16 A
I_F = 8 A
3500
3000
2500
2000
1500
1000
500
100
V_R = 390 V
T_J = 125 °C
T_J = 25 °C
1000
dI_F/dt (A/µs)
Fig. 10 - Typical Stored Charge vs. dI_F/dt
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;}
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 8); Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = Rated V_R
Revision: 02-Jan-12
4
Document Number: 94028
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