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VS-8ETL06PBF Datasheet, PDF (2/9 Pages) Vishay Siliconix – Ultralow VF Hyperfast Rectifier for Discontinuous Mode PFC, 8 A FRED Pt
VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
IF = 8 A, dIF/dt = 100 A/μs, VR = 30 V
trr
TJ = 25 °C
-
60
-
150
-
170
Peak recovery current
Reverse recovery charge
IRRM
Qrr
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 8 A
dIF/dt = 200 A/μs
VR = 390 V
-
250
-
15
-
20
-
1.3
-
2.6
MAX.
100
250
-
-
-
-
-
-
UNITS
ns
A
μC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
SYMBOL
TJ, TStg
TEST CONDITIONS
Thermal resistance,
junction to case
(FULL-PAK)
RthJC
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
RthJA
RthCS
Typical socket mount
Mounting surface, flat, smooth
and greased
Weight
Mounting torque
Marking device
Case style TO-220AC
Case style TO-220 FULL-PAK
MIN.
- 65
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
1.4
3.4
-
MAX.
175
2
4.3
70
UNITS
°C
°C/W
0.5
-
2.0
-
0.07
-
12
-
(10)
8ETL06
8ETL06FP
g
oz.
kgf · cm
(lbf · in)
100
10
TJ = 175 °C
1
TJ = 150 °C
TJ = 25 °C
0.1
0.4
0.8
1.2
1.6
2.0
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
0.001
100 200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 02-Jan-12
2
Document Number: 94028
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