VS-80APF1.PBF Datasheet, PDF (4/7 Pages) Vishay Siliconix – Fast Soft Recovery Rectifier Diode, 80A

VS-80APF1.PbF Series, VS-80APF1.-M3 Series
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Vishay Semiconductors
1000
100
T_J = 25 °C
10
T_J = 150 °C
80EPF.. Series
1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
800
80EPF.. Series
700
T_J = 25 °C
600
500
I_FM = 80 A
400
300
I_FM = 20 A
I_FM = 40 A
200
100
0
0
I_FM = 1 A
40
80
I_FM = 10 A
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T_J = 25 °C
12 000
10 000
80EPF.. Series
T_J = 25 °C
I_FM = 80 A
8000
6000
I_FM = 40 A
4000
2000
0
0
I_FM = 20 A
I_FM = 10 A
I_FM = 1 A
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T_J = 25 °C
1800
1600
1400
80EPF.. Series
T_J = 150 °C
1200
1000
800
600
I_FM = 80 A
I_FM = 40 A
I_FM = 20 A
I_FM = 10 A
I_FM = 1 A
400
200
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T_J = 150 °C
25 000
20 000
80EPF.. Series
T_J = 150 °C
I_FM = 80 A
15 000
I_FM = 40 A
10 000
I_FM = 20 A
5000
I_FM = 10 A
I_FM = 1 A
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T_J = 150 °C
Revision: 20-Oct-11
4
Document Number: 93725
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