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VS-80APF1.PBF Datasheet, PDF (2/7 Pages) Vishay Siliconix – Fast Soft Recovery Rectifier Diode, 80A
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VS-80APF1.PbF Series, VS-80APF1.-M3 Series
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
TEST CONDITIONS
TC = 92 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
80
1100
1250
5000
7000
70 000
UNITS
A
A2s
A2s
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
VFM
rt
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
80 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
TJ = 150 °C
VR = Rated VRRM
VALUES
1.35
4.03
0.87
0.1
12
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
S
TEST CONDITIONS
IF at 80 Apk
25 A/μs
25 °C
VALUES
480
7.1
2.1
0.5
UNITS
ns
A
μC
IFM
trr
dir
t
dt
Qrr
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
RthJA
RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-247AC
VALUES
- 40 to 150
UNITS
°C
0.35
40
°C/W
0.2
6
g
0.21
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
80APF10
80APF12
Revision: 20-Oct-11
2
Document Number: 93725
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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