VS-6EWX06FNHM3 Datasheet, PDF (4/7 Pages) Vishay Siliconix – Hyperfast Rectifier, 6 A FRED Pt

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180
170
160
DC
150
140
130 Square wave (D = 0.50)
Rated V_R applied
120
See note (1)
110
0
2
4
6
8
10
I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
16
14
12
10
RMS limit
8
D = 0.01
D = 0.02
6
D = 0.05
D = 0.10
4
D = 0.20
D = 0.50
2
DC
0
0
3
6
9
I_F(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;ï€} 
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 6);
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = Rated V_R
VS-6EWX06FNHM3
Vishay Semiconductors
30
25
I_F = 6 A, T_J = 125 °C
20
I_F = 6 A, T_J = 25 °C
15
10
100
1000
dI_F/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI_F/dt
140
120
100
80
I_F = 6 A, T_J = 125 °C
60
40
20
I_F = 6 A, T_J = 25 °C
0
100
1000
dI_F/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI_F/dt
Revision: 10-Jul-15
4
Document Number: 94745
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