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VS-6EWX06FNHM3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Hyperfast Rectifier, 6 A FRED Pt
www.vishay.com
VS-6EWX06FNHM3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
-
14
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
-
16
trr
TJ = 25 °C
-
19
TJ = 125 °C
-
27
IRRM
TJ = 25 °C
IF = 6 A
-
dIF/dt = 200 A/μs
3.0
TJ = 125 °C
VR = 390 V
-
4.0
TJ = 25 °C
Qrr
TJ = 125 °C
-
28
-
57
MAX.
21
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
TJ, TStg
RthJC
Approximate weight
Marking device
Case style TO-252AA (D-PAK)
MIN.
-65
-
TYP.
-
MAX.
175
-
3
0.3
0.01
6EWX06FNH
UNITS
°C
°C/W
g
oz.
Revision: 10-Jul-15
2
Document Number: 94745
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