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VS-4EGH06-M3 Datasheet, PDF (4/6 Pages) Vishay Siliconix – Hyperfast Rectifier, 4 A FRED Pt
www.vishay.com
VS-4EGH06-M3
Vishay Semiconductors
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(4) Qrr - area under curve defined by trr
and IRRM
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 8 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code VS- 4 E G H 06 -M3
1
2
3
4
5
6
7
1 - Vishay Semiconductors product
2 - Current rating (4 = 4 A)
3 - Circuit configuration:
E = single diode
4 - G = SMB package
5 - Process type,
H = hyperfast recovery
6 - Voltage code (06 = 600 V)
7 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
VS-4EGH06-M3/5BT
5BT
MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
3200
13"diameter plastic tape and reel
Dimensions
Part marking information
Packaging information
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95401
www.vishay.com/doc?95472
www.vishay.com/doc?95404
Revision: 10-Jul-15
4
Document Number: 94775
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000