VS-4EGH06-M3 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Hyperfast Rectifier, 4 A FRED Pt

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VS-4EGH06-M3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1.0 A, dI_F/dt = 100 A/μs, V_R = 30 V
-
30
I_F = 1.0 A, dI_F/dt = 50 A/μs, V_R = 30 V
-
35
t_rr
I_F = 0.5 A, I_R = 1 A, I_rr = 0.25 A
-
-
T_J = 25 °C
-
22
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
37
I_F = 4 A
-
3.4
dI_F/dt = 200 A/μs
V_R = 390 V
-
5.2
-
40
-
103
MAX.
-
-
35
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
T_J, T_Stg
R_thJC ⁽¹⁾
R_thJA ⁽¹⁾
Approximate Weight
Marking device
Note
(1) _{Mounted on PCB with minimum pad size}
Case style DO-214AA (SMB)
MIN.
-55
-
-
TYP.
-
MAX.
175
-
18
-
90
0.1
0.003
4H6
UNITS
°C
°C/W
g
oz.
100
10 _{TJ = 175 °C}
1
T_J = 150 °C
T_J = 25 °C
0.1
0.0
0.5 1.0 1.5 2.0 2.5 3.0
V_FM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
175 °C
10
150 °C
125 °C
1
0.1
25 °C
0.01
0.001
0.0001
0
100 200 300 400 500 600
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 10-Jul-15
2
Document Number: 94775
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