VS-40TTS12PBF Datasheet, PDF (4/7 Pages) Vishay Siliconix – Thyristor High Voltage, Phase Control SCR

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1000
100
VS-40TTS12PbF, VS-40TTS12-M3
Vishay Semiconductors
Tj = 25˚C
Tj = 125˚C
10
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
100
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
10
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(a)
(b)
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
1 ^VGD
(4) (3) (2) (1)
IGD
0.1
0.001
0.01
0.1
Frequency Limited by PG(AV)
1
10
100
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
1
0.1
Single Pulse
Steady State Value
(DC Operation)
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance Z_thJC Characteristics
Revision: 26-Jul-13
4
Document Number: 94390
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