VS-40TTS12PBF Datasheet, PDF (2/7 Pages) Vishay Siliconix – Thyristor High Voltage, Phase Control SCR

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VS-40TTS12PbF, VS-40TTS12-M3
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle 
non-repetitive surge current
I_T(AV)
I_RMS
I_TSM
Maximum I²t for fusing
I²t
Maximum I²ïƒ–t for fusing
Maximum on-state voltage
Low level value of on-state slope resistance
Low level value of threshold voltage
Maximum reverse and direct leakage
current
I²ïƒ–t
V_TM
r_t
V_T(TO)
I_RRM/I_DRM
Holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
I_H
I_L
dV/dt
dI/dt
TEST CONDITIONS
T_C = 93 °C, 180° conduction half sine wave
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
80 A, T_J = 25 °C
T_J = 140 °C
T_J = 25 °C
T_J = 140 °C
V_R = Rated V_RRM/V_DRM
Anode supply = 6 V, resistive load, initial I_T = 1 A, 
T_J = 25 °C
Anode supply = 6 V, resistive load, T_J = 25 °C
T_J = T_J max., linear to 80 °C, V_DRM = R_g - k = Open
VALUES
25
40
300
350
450
630
6300
1.6
11.4
0.96
0.5
12
100
200
500
150
UNITS
A
A²s
A²ïƒ–s
V
m
V
mA
V/μs
A/μs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum required DC gate current to
trigger
Maximum required DC gate 
voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
SYMBOL
P_GM
P_G(AV)
+ I_GM
- V_GM
I_GT
V_GT
V_GD
I_GD
TEST CONDITIONS
Anode supply = 6 V, resistive load, T_J = 25 °C
Anode supply = 6 V, resistive load, T_J = 25 °C
T_J = 140 °C, V_DRM = Rated value
VALUES
8.0
2.0
1.5
10
35
1.3
0.2
1.5
UNITS
W
A
V
mA
V
mA
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
t_gt
t_rr
t_q
T_J = 25 °C
TEST CONDITIONS
T_J = 140 °C
VALUES
0.9
4
110
UNITS
μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
T_J, T_Stg
Maximum thermal resistance, 
junction to case
R_thJC
DC operation
Maximum thermal resistance, 
junction to ambient
R_thJA
Typical thermal resistance, 
case to heatsink
R_thCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-220AB
VALUES
- 40 to 140
UNITS
°C
0.8
60
°C/W
0.5
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
40TTS12
Revision: 26-Jul-13
2
Document Number: 94390
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