UFH60GA60P Datasheet, PDF (4/7 Pages) Vishay Siliconix – Tandem Insulated SOT-227 Power Module Hyperfast Rectifier, 60 A

UFH60GA60P
Vishay Semiconductors
Tandem Insulated SOT-227
Power Module Hyperfast Rectifier, 60 A
180
160
140
120
DC
100
80
60
Square wave (D = 0.50)
40 Rated V_R applied
20 _{See note (1)}
0
0
20
40
60
80
100
94663_05
I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
90
80
70
60
RMS limit
50
D = 0.20
40
D = 0.25
30
D = 0.33
D = 0.50
20
DC
D = 0.75
10
0
0
10
20
30
40
50
94663_06
I_F(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
90
80
I_F = 30 A
V_R = 200 V
70
T_J = 125 °C
60
50
40
30
T_J = 25 °C
20
10
0
100
1000
94663_07
dI_F/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI_F/dt
500
450
I_F = 30 A
V_R = 200 V
400
350
T_J = 125 °C
300
250
200
150
100
T_J = 25 °C
50
0
100
1000
94663_08
dI_F/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI_F/dt
20
I_F = 30 A
V_R = 200 V
15
T_J = 125 °C
10
T_J = 25 °C
5
0
100
1000
94663_09
dI_F/dt (A/µs)
Fig. 9 - Typical Stored Current vs. dI_F/dt
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;}
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 6);
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = 80 % rated V_R
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For technical questions within your region, please contact one of the following: Document Number: 94663
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Revision: 22-Jul-10