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UFH60GA60P Datasheet, PDF (2/7 Pages) Vishay Siliconix – Tandem Insulated SOT-227 Power Module Hyperfast Rectifier, 60 A
UFH60GA60P
Vishay Semiconductors
Tandem Insulated SOT-227
Power Module Hyperfast Rectifier, 60 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Cathode to anode breakdown voltage VBR
Forward voltage
VFM
Reverse leakage current
IRM
Junction capacitance
CT
IR = 100 μA
IF = 30 A
IF = 60 A
IF = 30 A
IF = 60 A
TJ = 125 °C
VR = VR rated
TJ = 175 °C, VR = VR rated
VR = 600 V
MIN.
600
-
-
-
-
-
-
-
TYP.
-
2.08
2.36
1.79
2.1
0.03
0.1
33
MAX.
-
3.8
4.78
1.92
2.42
75
1.0
-
UNITS
V
μA
mA
pF
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
IRRM
Qrr
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
-
-
IF = 30 A
-
dIF/dt = 200 A/μs
VR = 200 V
-
-
-
TYP.
39
66
3
7
58
235
MAX.
80
110
7
11
280
605
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction to case,
single leg conducting
Junction to case,
both leg conducting
RthJC
Case to heatsink per module
RthCS
Flat, greased surface
Weight
Mounting torque
MIN.
-
-
-
-
-
TYP.
-
-
0.05
30
1.3
MAX. UNITS
0.78
0.39
°C/W
-
-
g
-
N·m
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For technical questions within your region, please contact one of the following: Document Number: 94663
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 22-Jul-10