UFB120FA40P_10 Datasheet, PDF (4/8 Pages) Vishay Siliconix – Insulated Ultrafast Rectifier Module, 120 A

UFB120FA40P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 120 A
160
140
120
100
DC
Square wave (D = 0.50)
80
80 % rated V_R applied
60
40
See note (1)
20
0
10 20 30 40 50 60 70
I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Avarage Forward Current (Per Diode)
70
60
50
RMS limit
40
30
20
10
0
0
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
DC
D = 0.50
10 20 30 40 50 60 70
I_F(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss (Per Diode)
160
150
140
130
120
110
100
90
80
70
60
50
100
V_RR = 200 V
I_F = 50 A
T_J = 125 °C
T_J = 25 °C
1000
dI_F/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI_F/dt
3050
2550
2050
1550
T_J = 125 °C
T_J = 25 °C
V_RR = 200 V
I_F = 50 A
1050
550
50
100
1000
dI_F/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI_F/dt
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;}
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 6);
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = 80 % rated V_R
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4
For technical questions within your region, please contact one of the following: Document Number: 94086
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Revision: 21-Jul-10