UFB120FA40P_10 Datasheet, PDF (3/8 Pages) Vishay Siliconix – Insulated Ultrafast Rectifier Module, 120 A

Insulated Ultrafast
Rectifier Module, 120 A
UFB120FA40P
Vishay Semiconductors
1000
100
T_J = 150 °C
10
T_J = 125 °C
T_J = 25 °C
1
0
0.5
1.0
1.5
2.0
V_F - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Diode)
1000
100
T_J = 150 °C
10
T_J = 125 °C
1
0.1
T_J = 25 °C
0.01
0.001
0
100
200
300
400
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
T_J = 25 °C
100
10
1
10
100
1000
V_R - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
0.01
0.0001
P
DM
Single pulse
(thermal resistance)
t
1
t
2
Notes:
1. Duty factor D = t₁/t_{2 .}
2. Peak T_J = P_DM x Z_thJC + T_C
.
0.001
0.01
0.1
1
10
t₁ - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z_thJC (Per Diode)
Document Number: 94086 For technical questions within your region, please contact one of the following:
Revision: 21-Jul-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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