TCDT1120 Datasheet, PDF (4/10 Pages) Vishay Siliconix – Optocoupler with Phototransistor Output

TCDT1120/ TCDT1120G
Vishay Semiconductors
Coupler
Parameter
Rated impulse voltage
Safety temperature
Test condition
Symbol
Min
Typ.
Max
Unit
V_IOTM
6
kV
T_si
150
°C
Insulation Rated Parameters
Parameter
Partial discharge test voltage -
Routine test
Partial discharge test voltage -
Lot test (sample test)
Test condition
100 %, t_test = 1 s
t_Tr = 60 s, t_test = 10 s,
(see figure 2)
Insulation resistance
V_IO = 500 V
V_IO = 500 V, T_amb ≤ 100 °C
V_IO = 500 V, T_amb ≤ 150 °C
(construction test only)
300
P_{si (mW)}
250
200
150
100
I_{si (mA)}
50
0
0
95 10934
25 50 75 100 125 150 175 200
T_amb ( °C )
Figure 1. Derating diagram
Symbol
V_pd
V_IOTM
V_pd
R_IO
R_IO
R_IO
V_IOTM
V_Pd
V_IOWM
V_IORM
Min
Typ.
1.6
6
1.3
10¹²
10¹¹
10⁹
t₁, t₂ = 1 to 10 s
t₃, t₄ = 1 s
t_test = 10 s
t_stres = 12 s
Max
Unit
kV
kV
kV
Ω
Ω
Ω
0
t₁
13930
t_Tr = 60 s
t₃ t_test t₄
t₂ t_stres
t
Figure 2. Test pulse diagram for sample test according to DIN EN
60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747
Switching Characteristics
Parameter
Current Delay
Test condition
Symbol
Unit
TCDT1120
TCDT1120G
TCDT1123
TCDT1123G
TCDT1124
TCDT1124G
I_F
t_D
mA
µs
10
2.5
10
2.5
10
2.8
10
2.0
Rise time Storage Fall time
V_S = 5 V, R_L = 100 Ω
(see figure 3)
t_r
t_S
t_f
µs
µs
µs
3.0
0.3
3.7
Turn-on
time
t_on
µs
5.5
3.0
0.3
3.7
5.5
4.2
0.3
4.7
7.0
4.0
0.3
4.7
6.0
Turn-off
time
t_off
µs
4.0
4.0
5.0
5.0
Turn-on
time
Turn-off
time
V_S = 5 V, R_L = 1 kΩ
(see figure 4)
t_on
t_off
µs
µs
16.5
22.5
16.5
22.5
21.5
37.5
20.0
50.0
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4
Document Number 83532
Rev. 1.6, 26-Oct-04