TCDT1120 Datasheet, PDF (2/10 Pages) Vishay Siliconix – Optocoupler with Phototransistor Output

TCDT1120/ TCDT1120G
Vishay Semiconductors
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
V_R
5
V
Forward current
I_F
60
mA
Forward surge current
t_p ≤ 10 µs
I_FSM
3
A
Power dissipation
P_diss
100
mW
Junction temperature
T_j
125
°C
Output
Parameter
Test condition
Symbol
Value
Unit
Collector base voltage
V_CBO
90
V
Collector emitter voltage
V_CEO
90
V
Emitter collector voltage
V_ECO
7
V
Collector current
I_C
50
mA
Collector peak current
t_p/T = 0.5, t_p ≤ 10 ms
I_CM
100
mA
Power dissipation
P_diss
150
mW
Junction temperature
T_j
125
°C
Coupler
Parameter
Isolation test voltage (RMS)
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
Test condition
t = 1 min
2 mm from case, t ≤ 10 s
Symbol
V_ISO
P_tot
T_amb
T_stg
T_sld
Value
3750
250
- 55 to + 100
- 55 to + 125
260
Unit
V_RMS
mW
°C
°C
°C
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Junction capacitance
Test condition
I_F = 50 mA
V_R = 0, f = 1 MHz
Symbol
Min
Typ.
Max
Unit
V_F
1.25
1.6
V
C_j
50
pF
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Document Number 83532
Rev. 1.6, 26-Oct-04