Si7866DP Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

Si7866DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
200
0.2
160
I_D = 250 mA
-0.0
120
Single Pulse Power
-0.2
80
-0.4
-0.6
-50 -25
0 25 50 75 100 125 150
T_J - Temperature (_C)
40
0
0.001
0.01
0.1
1
10
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^{- 4}
Single Pulse
10^{- 3}
10^{- 2}
10^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 50_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05 _0.02
0.01
10^{- 4}
www.vishay.com
4
10^{- 3}
10^{- 2}
10^{- 1}
Square Wave Pulse Duration (sec)
1
10
Document Number: 71848
S-21412—Rev. B, 05-Aug-02