Si7866DP Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

New Product
Si7866DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.005
On-Resistance vs. Drain Current
8000
Capacitance
0.004
0.003
0.002
V_GS = 4.5 V
V_GS = 10 V
0.001
0.000
0
10
20
30
40
50
60
I_D - Drain Current (A)
Gate Charge
6.0
V_DS = 10 V
4.8
I_D = 29 A
3.6
2.4
1.2
0.0
0
12
24
36
48
60
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
60
T_J = 150_C
10
T_J = 25_C
6400
C_iss
4800
3200
1600
C_oss
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
1.8
V_GS = 10 V
I_D = 29 A
1.6
1.4
1.2
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.010
0.008
0.006
0.004
I_D = 29 A
0.002
1
0.00
0.2
0.4
0.6
0.8 1.0 1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 71848
S-21412—Rev. B, 05-Aug-02
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
www.vishay.com
3