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| Si7409DN Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET | |||
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Si7409DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
Single Pulse Power, Juncion-To-Ambient
50
0.4
ID = 250 mA
40
0.2
30
- 0.0
20
- 0.2
TA = 25_C
Single Pulse
- 0.4
10
- 0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (_C)
0
0.01
0.1
1
10
Time (sec)
100
600
2
1
Duty Cycle = 0.5
Safe Operating Area, Junction-To-Ambient
100
rDS(on) Limited
IDM Limited
100 ms, 10 ms
10
1 ms
1
0.1
0.01
0.1
ID(on)
Limited
TA = 25_C
Single Pulse
BVDSS Limited
10 ms
100 ms
1s
10 s
dc, 100 s
1
10
100
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72127
S-03372âRev. A, 03-Mar-03
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