Si7409DN Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
Si7409DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
On-Resistance vs. Drain Current
4000
Capacitance
0.024
0.018
0.012
V_GS = 2.5 V
V_GS = 4.5 V
3200
2400
C_iss
1600
0.006
0.000
0
5
10
15
20
25
30
I_D - Drain Current (A)
Gate Charge
5
V_DS = 15 V
4
I_D = 11 A
800
C_oss
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
1.4
I_D = 11 A
3
1.2
2
1.0
1
0.8
0
0
5
10
15
20
25
30
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
10
T_J = 150_C
1
0.1
T_J = 25_C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 72127
S-03372—Rev. A, 03-Mar-03
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.12
0.10
0.08
I_D = 11 A
0.06
0.04
0.02
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
www.vishay.com
3