SUP90N10-8M8P Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

SUP90N10-8m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.5
0.7
I_D = 20 A
2.0
V_GS = 10 V
0.2
- 0.3
1.5
- 0.8
I_D = 5 mA
- 1.3
1.0
I_D = 250 µA
- 1.8
0.5
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
10
I_D = 85 A
8
V_DS = 50 V
V_DS = 30 V
6
V_DS = 70 V
- 2.3
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
130
I_D = 1 mA
124
118
4
112
2
106
0
0
100
10
1
22
44
66
88
110
Q_g - Total Gate Charge (nC)
Gate Charge
T_J = 150 °C
T_J = 25 °C
100
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
140
112
Package Limited
84
0.1
56
0.01
28
0.001
0
0.2 0.4
0.6
0.8
1.0 1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Maximum Drain Current vs. Case Temperature
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4
Document Number: 74644
S-71689-Rev. A, 13-Aug-07