SUP90N10-8M8P Datasheet, PDF (3/6 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
120
180
V_GS = 10 thru 7 V
100
150
80
120
60
90
6V
40
60
20
30
5V
0
0
0
1
2
3
4
5
0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
100
0.05
SUP90N10-8m8P
Vishay Siliconix
T_C = - 55 °C
T_C = 25 °C
T_C = 125 °C
12
24
36
48
60
I _D - Drain Current (A)
Transconductance
80
0.04
60
0.03
40
20
0
0
0.0076
0.0074
0.0072
T_C = 125 °C
T_C = 25 °C
T_C = - 55 °C
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
V_GS = 10 V
0.02
T_A = 150 °C
0.01
0.00
T_A = 25 °C
4.0
5.2
6.4
7.6
8.8
10.0
V_GS - Gate-to-Source Voltage (V)
On-resistance vs. Gate-to-Source Voltage
8000
C_iss
6400
4800
0.0070
3200
0.0068
0.0066
0
20
40
60
80
100
I_D - Drain Current (A)
On-Resistance vs. Drain Current
1600
0 ^Crss
0
20
C_oss
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 74644
S-71689-Rev. A, 13-Aug-07
www.vishay.com
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