SUP90140E Datasheet, PDF (4/8 Pages) Vishay Siliconix – N-Channel 200 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
3
3.6
2.5
3.2
V_GS= 10 V, I_D = 30 A
2
2.8
SUP90140E
Vishay Siliconix
I_D = 250 μA
1.5
V_GS = 7.5 V, I_D = 30 A
1
0.5
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.05
0.04
I_D = 30 A
2.4
2
1.6
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
260
I_D = 250 μA
250
0.03
0.02
0.01
T_J = 125 °C
240
230
T_J = 25 °C
220
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
210
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
100
80
10
T_J = 150 °C
60
T_J = 25 °C
40
1
20
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Current De-rating
S15-2641-Rev. A, 16-Nov-15
4
Document Number: 79036
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