SUP90140E Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel 200 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
150
150
V_GS = 10 V thru 6 V
120
120
SUP90140E
Vishay Siliconix
90
60
30
0
0
100
V_GS = 5 V
V_GS =4 V
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
90
60
30
0
0
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.017
80
T_C = 25 °C
60
T_C = - 55 °C
40
20
T_C = 125 °C
0.016
0.015
0.014
0.013
V_GS = 7.5 V
V_GS = 10 V
0
0
6
12
18
24
30
I_D - Drain Current (A)
Transconductance
0.012
0
20
40
60
80
100
I_D - Drain Current (A)
On-Resistance vs. Drain Current
7000
10
5600
C_iss
4200
I_D = 60 A
V_DS = 100 V
8
V_DS = 50 V
6
V_DS = 150 V
2800
4
C_oss
1400
2
C_rss
0
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
0
0
13
26
39
52
65
Q_g - Total Gate Charge (nC)
Capacitance
Gate Charge
S15-2641-Rev. A, 16-Nov-15
3
Document Number: 79036
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000