SUP70N04-10 Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 40-V (D-S)

SUP/SUB70N04-10
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
100
V_GS = 10 V
I_D = 30 A
2.0
1.5
10
1.0
Source-Drain Diode Forward Voltage
T_J = 150_C
T_J = 25_C
0.5
0.0
–50 –25
0 25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
80
60
40
20
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD – Source-to-Drain Voltage (V)
Safe Operating Area
200
100
Limited
by r_DS(on)
10
T_C = 25_C
Single Pulse
1
10 ms
100 ms
1 ms
10 ms
100 ms
dc
0
0
25 50 75 100 125 150 175
T_A – Ambient Temperature (_C)
0.1
0.1
1
10
50
V_DS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1 _{Duty Cycle = 0.5}
0.2
0.1
0.1
0.05
0.02
0.01
10^–5
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2-4
Single Pulse
10^–4
10^–3
10^–2
Square Wave Pulse Duration (sec)
10^–1
1
3
Document Number: 70783
S-05110—Rev. D, 10-Dec-01