SUP70N04-10 Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 40-V (D-S)

SUP/SUB70N04-10
Vishay Siliconix
N-Channel 40-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
40
r_DS(on) (W)
0.010 @ V_GS = 10 V
0.014 @ V_GS = 4.5 V
I_D (A)
70
58
TO-220AB
TO-263
DRAIN connected to TAB
GDS
Top View
SUP70N04-10
G DS
Top View
SUB70N04-10
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy^a
Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 100_C
L = 0.1 mH
T_C = 25_C
V_DS
V_GS
I_D
I_DM
I_AR
E_AR
P_D
T_J, T_stg
40
"20
70
47
140
60
180
107^b
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
PCB Mount (TO-263)^c
Free Air (TO-220)
Notes:
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. Surface mounted on 1” FR4 board.
Document Number: 70783
S-05110—Rev. D, 10-Dec-01
Symbol
R_thJA
R_thJC
Typical
35
45
1.2
Maximum
40
50
1.4
Unit
_C/W
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