SUP70040E Datasheet, PDF (4/8 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
2.1
I_D = 20 A
1.8
1.5
V_GS = 10 V
100
10
T_J = 150 °C
1
SUP70040E
Vishay Siliconix
1.2
0.1
T_J = 25 °C
0.9
0.01
0.6
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.020
0.016
0.012
0.008
T_J = 150 °C
0.004
T_J = 25 °C
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
125
I_D = 10 mA
120
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
4
I_D = 250 μA
3.4
2.8
2.2
1.6
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
115
110
105
100
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S13-0736-Rev. A, 13-Apr-15
4
Document Number: 62996
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