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SUP70040E Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET
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www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SUP70040E
Vishay Siliconix
200
VGS = 10 V thru 7 V
VGS = 6 V
150
100
50
0
0
VGS = 5 V
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
Output Characteristics
150
120
90
60
30
0
0
TC = 125°C
TC = 25°C
TC = - 55°C
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
200
TC = - 55 °C
160
TC = 25 °C
120
TC = 125 °C
80
0.008
0.006
0.004
VGS = 7.5 V
VGS = 10 V
0.002
40
0
0
14
28
42
56
70
ID - Drain Current (A)
Transconductance
0
0
30
60
90
120
ID - Drain Current (A)
On-Resistance vs. Drain Current
8900
6675
Ciss
4450
2225
Coss
Crss
0
0
20
40
60
80
100
VDS - Drain-to-Source Voltage (V)
Capacitance
10
ID = 20 A
8
VDS = 25 V
VDS = 50 V
6
VDS = 80 V
4
2
0
0
20
40
60
80
Qg - Total Gate Charge (nC)
Gate Charge
S13-0736-Rev. A, 13-Apr-15
3
Document Number: 62996
For technical questions, contact: pmostechsupport@vishay.com
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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