SUP60N06-12P Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

SUP60N06-12P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
100
I_D = 15 A
1.7
10
1.4
V_GS = 10 V
1
1.1
0.1
T_J = 150 °C
T_J = 25 °C
0.8
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
74
I_D = 1 mA
70
66
62
- 50 - 25 0
25 50 75 100 125 150
T_J - Temperature (°C)
Drain-Source Breakdown vs. Junction Temperature
75
0.01
T_J = - 50 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.4
0.0
- 0.4
- 0.8
- 1.2
I_D = 1 mA
I_D = 250 µA
- 1.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
60
Package Limited
45
30
15
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Maximum Drain Current vs. Case Temperature
www.vishay.com
4
Document Number: 69070
S10-1475-Rev. C, 05-Jul-10