SUP50020EL Datasheet, PDF (4/8 Pages) Vishay Telefunken – N-Channel 60 V (D-S) MOSFET

www.vishay.com
TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
1.90
2.4
1.65
2
V_GS = 10 V, I_D = 30 A
1.40
1.6
SUP50020EL
Vishay Siliconix
I_D = 250 μA
1.15
1.2
V_GS = 4.5 V, I_D = 20 A
0.90
0.8
0.65
-50 -25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.006
I_D = 30 A
0.004
0.002
T_J = 125 °C
T_J = 25 °C
0.4
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
74
I_D = 250 μA
72
70
68
66
0
0
1.5
3
4.5
6
7.5
9
V_GS - Gate -to -Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
64
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
100
312
260
T_J = 150 °C
10
208
156
T_J = 25 °C
1
104
52
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source- to- Drain Voltage (V)
Source Drain Diode Forward Voltage
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Current De-rating
S15-1868-Rev. A, 10-Aug-15
4
Document Number: 68273
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000