SUP50020EL Datasheet, PDF (2/8 Pages) Vishay Telefunken – N-Channel 60 V (D-S) MOSFET

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SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 250 μA
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 μA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
V_DS = 60 V, V_GS = 0 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = 60 V, V_GS = 0 V, T_J = 125 °C
On-State Drain Current ^a
I_D(on)
V_DS = 60 V, V_GS = 0 V, T_J = 175 °C
V_DS ≥ 10 V, V_GS = 10 V
Drain-Source On-State Resistance ^a
Forward Transconductance ^a
Dynamic ^b
R_DS(on)
g_fs
V_GS = 10 V, I_D = 30 A
V_GS = 4.5 V, I_D = 20 A
V_DS = 15 V, I_D = 30 A
Input Capacitance
C_iss
Output Capacitance
C_oss
V_GS = 0 V, V_DS = 30 V, f = 1 MHz
Reverse Transfer Capacitance
Total Gate Charge ^c
Gate-Source Charge ^c
Gate-Drain Charge ^c
C_rss
Q_g
Q_gs
V_DS = 30 V, V_GS = 10 V, I_D = 20 A
Q_gd
Gate Resistance
R_g
f = 1 MHz
Turn-On Delay Time ^c
t_d(on)
Rise Time ^c
Turn-Off Delay Time ^c
t_r
t_d(off)
V_DD = 30 V, R_L = 5 Ω
I_D ≅ 10 A, V_GEN = 10 V, R_g = 1 Ω
Fall Time ^c
t_f
Drain-Source Body Diode Ratings and Characteristics ^b (T_C = 25 °C)
Pulsed Current (t = 100 μs)
I_SM
Forward Voltage ^a
V_SD
I_F = 10 A, V_GS = 0 V
Reverse Recovery Time
t_rr
Peak Reverse Recovery Charge
I_RM(REC)
I_F = 39 A, di/dt = 100 A/μs
Reverse Recovery Charge
Q_rr
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
SUP50020EL
Vishay Siliconix
MIN.
TYP.
MAX.
UNIT
60
-
-
V
1.2
-
2.5
-
-
± 250
nA
-
-
1
μA
-
-
150
-
-
5
mA
120
-
-
A
-
0.0019 0.0023
Ω
-
0.0023 0.0028
-
145
-
S
-
11 113
-
-
4625
-
pF
-
475
-
-
126
-
-
31.2
-
nC
-
7.1
-
0.32
1.6
3.2
Ω
-
15
30
-
20
40
ns
-
55
100
-
11
20
-
-
300
A
-
0.8
1.5
V
-
120
180
ns
-
5
10
A
-
0.287
0.430
μC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1868-Rev. A, 10-Aug-15
2
Document Number: 68273
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000