SUM90N06-4M4P Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

SUM90N06-4m4P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
0.8
I_D = 20 A
1.7
0.2
V_GS = 10 V
1.4
- 0.4
1.1
- 1.0
I_D = 5 mA
0.8
0.5
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
10
I_D = 85 A
8
V_DS = 30 V
V_DS = 20 V
6
4
V_DS = 40 V
2
0
0
100
10
1
22
44
66
88
110
Q_g - Total Gate Charge (nC)
Gate Charge
T_J = 150 °C
T_J = 25 °C
0.1
- 1.6
I_D = 250 µA
- 2.2
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
74
72
I_D = 1 mA
70
68
66
64
62
60
58
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
185
148
111
Package Limited
74
0.01
37
0.001
0
0.2
0.4
0.6
0.8
1.0 1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Maximum Drain Current vs. Case Temperature
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4
Document Number: 74642
S-71691-Rev. A, 13-Aug-07