SUM90N06-4M4P Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

SUM90N06-4m4P
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
r_DS(on) (Ω)
60
0.0044 at V_GS = 10 V
I_D (A)
90^d
Q_g (Typ)
105
TO-263
FEATURES
• TrenchFET^® Power MOSFETS
• 175 °C Junction Temperature
• 100 % R_g and UIS Tested
APPLICATIONS
• Power Supply
- Secondary Synchronous Rectification
• Industrial
• OR-ing
D
RoHS
COMPLIANT
G DS
Top View
Ordering Information: SUM90N06-4m4P-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
60
V
V_GS
± 20
Continuous Drain Current (T_J = 175 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
I_D
90^d
90^d
A
I_DM
240
Avalanche Current
I_AS
70
Single Avalanche Energy^a
L = 0.1 mH
E_AS
245
mJ
Maximum Power Dissipation^a
T_C = 25 °C
300^b
T_A = 25 °C^c
P_D
3.75
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)^c
Junction-to-Case (Drain)
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 74642
S-71691-Rev. A, 13-Aug-07
Symbol
R_thJA
R_thJC
Limit
40
0.5
Unit
°C/W
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