SUM70090E Datasheet, PDF (4/8 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
SUM70090E
Vishay Siliconix
2.1
I_D = 20 A
1.8
1.5
1.2
0.9
Axis Title
V_GS = 10 V
10000
V_GS = 7.5 V
1000
100
100
10
1
0.1
0.01
Axis Title
T_J = 150 °C
T_J = 25 °C
10000
1000
100
0.6
10
-50 -25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
0.001
0
0.2 0.4 0.6 0.8 1.0
V_SD - Source-to-Drain Voltage (V)
2nd line
10
1.2
Source Drain Diode Forward Voltage
Axis Title
0.03
10000
0.024
0.018
0.012
0.006
T_J = 150 °C
T_J = 25 °C
1000
100
02
4
6
8
10 ¹⁰
V_GS - Gate-to-Source Voltage (V)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Axis Title
3.6
10000
I_D = 250 μA
3.0
1000
2.4
100
1.8
1.2
-50 -25
10
0 25 50 75 100 125 150 175
T_J - Temperature (°C)
2nd line
Threshold Voltage
120
I_D = 250 μA
116
Axis Title
112
108
10000
1000
100
104
-50 -25
10
0 25 50 75 100 125 150 175
T_J - Temperature (°C)
2nd line
Drain Source Voltage vs. Junction Temperature
1000
Axis Title
10000
Limited by I_DM
100
10 ^{Limited by RDS(on)*}
1
1000
100 μs
1 ms
10 ms
DC, 10 s, ₁₀₀
1 s, 100 ms
0.1
T_C = 25 °C
Single Pulse
0.01
0.1
1
BVDSS Limited
10
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
S16-0163-Rev. A, 01-Feb-16
4
Document Number: 64432
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